The effects of pretreatment, CH4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. A, 1997, Pages 1238-1244

  Park, Jong Wan ^a   Lee, You Kee ^a   Lee, Sei Hyun ^a   Cho, Kwang Joon ^a   Lee, Jae Suk ^a   Lee, Seoghyeong ^a   Jeon, Hyeongtag ^a   Choi, Ji Hwan ^a  

^a Hanyang University   (South Korea)

Author keywords

Defects; Diamond thin films; Methane gas ratio effect; Microstructures; MPECVD; Pretreatment effect; Substrate bias effect

Indexed keywords

METHANE GAS RATIO EFFECT; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRETREATMENT; SUBSTRATE BIAS EFFECT;

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; METHANE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIAMOND FILMS;

EID: 0031094796     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1238     Document Type: Article

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