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Volumn 58, Issue 3, 1997, Pages 245-247

Preparation and properties of yttrium-modified lead zirconate titanate ferroelectric thin films

Author keywords

Ferroelectric thin films; Lead zirconate titanate (PZT); Sol gel technique; Yttrium modified lead zirconate titanate (PYZT)

Indexed keywords

COMPOSITION EFFECTS; FABRICATION; LEAD COMPOUNDS; PERFORMANCE; SOL-GELS; THIN FILMS; TITANATE MINERALS; YTTRIUM COMPOUNDS; ZIRCONIUM COMPOUNDS;

EID: 0031081874     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01400-3     Document Type: Article
Times cited : (23)

References (6)
  • 2
    • 0001571869 scopus 로고
    • Physics of the ferroelectric nonvolatile memory field effect transistor
    • S.L. Miller and P.J. Mcwhorter, Physics of the ferroelectric nonvolatile memory field effect transistor, J. Appl. Phys., 72 (1992) 5999-6010.
    • (1992) J. Appl. Phys. , vol.72 , pp. 5999-6010
    • Miller, S.L.1    Mcwhorter, P.J.2
  • 4
    • 84963388473 scopus 로고
    • Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon
    • T.S. Kalkur, J. Kulkarni, Y.C. Lu, M. Rowe, W. Han and L. Kammerdiner, Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon, Ferroelectrics, 116 (1991) 135-146.
    • (1991) Ferroelectrics , vol.116 , pp. 135-146
    • Kalkur, T.S.1    Kulkarni, J.2    Lu, Y.C.3    Rowe, M.4    Han, W.5    Kammerdiner, L.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.