Integrated real-time and run-to-run control of etch depth in reactive ion etching

IEEE Transactions on Semiconductor Manufacturing

Volumn 10, Issue 1, 1997, Pages 121-130

  Hankinson, Matt ^b   Vincent, Tyrone ^b   Irani, Keki B ^a,b   Khargonekar, Pramod P ^a,b  

^a IEEE

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Machine learning; Plasma etching; Process control

Indexed keywords

CHEMICAL REACTORS; COMPUTER CONTROL SYSTEMS; LEARNING SYSTEMS; OXYGEN; PLASMA APPLICATIONS; PROCESS CONTROL; REACTIVE ION ETCHING; REAL TIME SYSTEMS; SEMICONDUCTING SILICON;

ETCH DEPTH; POLYSILICON ETCH; REAL TIME CONTROL SYSTEMS; RUN TO RUN CONTROL SYSTEMS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031079496     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.554497     Document Type: Article

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