The initial growth of ZnSe on Te-, Se-and Zn-terminated GaAs(100)

Semiconductor Science and Technology

Volumn 12, Issue 2, 1997, Pages 234-239

  Spahn, W ^a   Ress H R ^a   Fischer, C ^a   Ehinger, M ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION X RAY DIFFRACTION; TWO DIMENSIONAL GROWTH; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031079455     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/2/014     Document Type: Article

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