Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

Applied Physics Letters

Volumn 70, Issue 8, 1997, Pages 1031-1033

  Paschke, K ^a   Geue, T ^a   Barberka, T A ^a   Bolm, A ^a   Pietsch, U ^a   Rosch M ^b   Batke, E ^b   Faller, F ^b   Kerkel, K ^b   Oshinowo, J ^b   Forchel, A ^b  

^a UNIVERSITY OF POTSDAM   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; FOURIER TRANSFORMS; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SYNCHROTRON RADIATION; WIRE; X RAY DIFFRACTION;

BRAGG DIFFRACTION; CRYSTAL TRUNCATION RODS; FREE STANDING WIRE ARRAYS; HOLOGRAPHIC EXPOSURE; INDIUM GALLIUM ARSENIDE; X RAY GRAZING INCIDENCE DIFFRACTION;

NANOSTRUCTURED MATERIALS;

EID: 0031079413     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118473     Document Type: Article

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