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Volumn 371, Issue 2-3, 1997, Pages 297-306

Iron suicides grown on Si(100): Metastable and stable phases

Author keywords

Epitaxy; Iron; Metal semiconductor interfaces; Semiconductor semiconductor interfaces; Silicides; Silicon; Single crystal epitaxy; Visible and ultraviolet photoelectron spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ORDER DISORDER TRANSITIONS; PHOTOEMISSION; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0031078801     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01013-8     Document Type: Article
Times cited : (28)

References (23)
  • 17
    • 30244535215 scopus 로고    scopus 로고
    • note
    • This value differs somewhat from a previous determination based in the assignment of a slope change to the Fe 2p signal growth vs evaporation time in Ret. [2]. We note that the determination of the slope break might be affected by the formation of a reactive interface at the initial stages of Fe growth [13], which may explain the different value found in this study.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.