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Volumn 240, Issue 3, 1997, Pages 205-214

A generalized model for radiation-induced amorphization and crystallization of U3Si and U3Si2 and recrystallization of UO2

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EXPERIMENTAL REACTORS; FISSION REACTIONS; GRAIN GROWTH; ION BOMBARDMENT; MATHEMATICAL MODELS; RADIATION EFFECTS; REACTION KINETICS; SHOCK WAVES;

EID: 0031078574     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(96)00714-3     Document Type: Article
Times cited : (29)

References (29)
  • 24
    • 0000827689 scopus 로고
    • eds. F. Seitz and D. Turnbull, Academic Press, New York
    • D. Turnbull, in: Solid State Physics, eds. F. Seitz and D. Turnbull, Vol. 3 (Academic Press, New York, 1956) p. 226.
    • (1956) Solid State Physics , vol.3 , pp. 226
    • Turnbull, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.