Asymmetric quantum wells with enhanced QCSE: Modulation behavior and application for integrated laser/modulator

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 191-193

  Steinmann, Philipp ^a   Borchert, Bernd ^a,b   Stegmüller, Bernhard ^a,b  

^a SIEMENS AG   (Germany)

^b IEEE

Author keywords

Asymmetric quantum wells; Laser modulator integration; Quantum confined Stark effect

Indexed keywords

CORRELATION DETECTORS; ELECTRON TRANSITIONS; ENERGY GAP; INTEGRATED OPTOELECTRONICS; LIGHT MODULATION; LIGHT MODULATORS; MATRIX ALGEBRA; OPTIMIZATION; PERTURBATION TECHNIQUES; QUANTUM WELL LASERS; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE STRUCTURES;

CHIRP PARAMETERS; ELECTROABSORPTION MODULATORS; FERMI DIRAC DISTRIBUTION; KRAMERS KRONIG RELATIONS; LASER MODULATOR INTEGRATION; QUANTUM CONFINED STARK EFFECT (QCSE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031078274     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553087     Document Type: Article

References (9)

1. N. Susa and T. Nakahara, "Enhancement of change in the absorption coefficient in an asymmetric quantum well," Appl. Phys. Lett., vol. 60, pp. 2324-2326, 1992.
2. Y. Huang, J. Wang, and C. Lien, "Electric-field dependence of optical properties in coupled quantum wells and their application to 1.3 μ optical modulator," J. Appl. Phys., vol. 77, pp. 11-16, 1995.
3. M. Silver, P. D. Greene, and A. R. Adams, "Polarization-insensitive modulators based on multistrrain stepped quantum well structures," Electron. Lett. vol. 30, pp. 1890-1891, 1994.
4. W. Chen and T. G. Andersson, "Quantum-confined Stark shift for differently shaped quantum wells," Semiconduct. Sci. Technol., vol. 7, pp. 828-836, 1992.
5. H. Q. Hou and T. Y. Chang, "Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells," IEEE Photon. Technol. Lett., vol. 7, pp. 167-169, 1995.
6. D. Ahn, "Enhancement of the Stark effect in coupled quantum wells for optical switching devices," IEEE J. Quantum Electron., vol. 25, pp. 2260-2265, 1989.
7. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, pp. 259-264, 1982.
8. M. P. C. M. Krijn, "Heterojunction band offsets and effective masses in III-V quaternary alloys," Semiconduct. Sci. Technol., vol. 6, pp. 27-31, 1991.
9. A. Ramdane, A. Ougazzaden, F. Deveaux, F. Delorme, M. Schneider, J. Landreau, "Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration," Electron. Lett., vol. 30, pp. 1980-1981, 1994.