Formation of a silicate layer between lead oxide and a silicon-wafer surface during heat treatment

Journal of Materials Science

Volumn 32, Issue 3, 1997, Pages 815-820

  Lee, Won Gyu ^a   Woo, Seong Ihl ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; INTERDIFFUSION (SOLIDS); LEAD COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICATES; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION;

INTERDIFFUSION REACTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICATE FORMATION; SILICON SUBSTRATE; TETRAETHYL LEAD;

INTERFACES (MATERIALS);

EID: 0031078168     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018529011594     Document Type: Article

References (12)

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