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Volumn 101, Issue 8, 1997, Pages 585-589
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Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
HETEROJUNCTIONS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
OPTICAL VARIABLES MEASUREMENT;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
STRAIN;
SUBSTRATES;
SURFACE PROPERTIES;
ANTIPHASE DOMAIN;
GALLIUM PHOSPHIDE;
LOW TEMPERATURE PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE EXCITATION;
EPITAXIAL GROWTH;
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EID: 0031078023
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(96)00661-8 Document Type: Article |
Times cited : (1)
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References (17)
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