Limitation of the TiN/Ti layer formed by the rapid thermal heat treatment of pure Ti films in an NH3 ambient in fabrication of submicrometer CMOS flash EPROM IC's

IEEE Transactions on Semiconductor Manufacturing

Volumn 10, Issue 1, 1997, Pages 147-153

  Farahani, M M ^b   Buller, James F ^a,b   Garg, Shyam ^b  

^a IEEE

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FAILURE ANALYSIS; HEAT TREATMENT; INTERFACES (MATERIALS); NITRIDING; PROM; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT FAILURE RATE; CONTACT RESISTANCE; ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY; NITRIDATION; RAPID THERMAL HEAT TREATMENT; TITANIUM FILMS; TITANIUM NITRIDE FILMS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031077741     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.554502     Document Type: Article

References (10)

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