Effects of quenching treatment on the structure and electrical property in doped V2O3 system

Journal of Materials Science

Volumn 32, Issue 4, 1997, Pages 1049-1053

  Chen, W ^a   Xu, Q ^a   Cui, W Q ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; MICROCRACKS; MICROSTRUCTURE; PHASE TRANSITIONS; QUENCHING; THERMAL EFFECTS;

RESISTIVITY RATIOS;

VANADIUM COMPOUNDS;

EID: 0031077620     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018538708385     Document Type: Article

References (7)

1. D. B. MCWHAN and J. P. REMEIKA, Phys. Rev. B. 9 (1970) 3734.
2. R. S. PERKINS, A. RÜEGG, M. FISCHER, P. STREIT and A. MENTH, IEEE Trans. Components, Hybrids Manuf. Technol. 2 (1982) 225.
3. H. KUWAMOTO, J. M. HONIG and J. APPEL, Phys. Rev. B. 22 (1980) 2626.
4. R. S. PERKINS, A. RÜEGG and M. FISCHER, Adv. Ceram. Addit. Interfaces Electron. Ceram. 7 (1983) 166.
5. W. CHEN, Q. XU, W. Q. CUI, Y. Q. ZHOU, M. HONG and F. B. ZHAO, J. Wuhan Univ. Technol (Chinese) 2 (1994) 18.
6. B. C. HENDIX, X. WANG, W. CHEN and W. Q. CUI, J. Mater. Sci.: Mater. Electron. 3 (1992) 113.
7. A. RÜEGG, R. S. PERKINS and P. STREIT, Sci. Ceram. 11 (1981) 559.