Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO)6 pyrolysis

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 595-599

  Davazoglou, D ^a,d   Moutsakis, A ^a   Valamontes, V ^a   Psycharis, V ^b   Tsamakis, D ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS NTUA   (Greece)

^d ELECTROCHEMICAL SOCIETY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM GROWTH; MORPHOLOGY; SILICON WAFERS; THIN FILMS; TUNGSTEN COMPOUNDS; X RAY CRYSTALLOGRAPHY;

POLYCRYSTALLINE SILICON; TUNGSTEN OXIDE FILMS;

PYROLYSIS;

EID: 0031076779     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837453     Document Type: Article

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