Small-signal deep-level transient spectroscopy as a local probe of potential fluctuations due to electrically active defects

Semiconductor Science and Technology

Volumn 12, Issue 2, 1997, Pages 157-165

  Nadazdy V ^a   Thurzo, I ^a  

^a INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CORRELATION METHODS; DEFECTS; ELECTRIC EXCITATION; ERRORS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL POTENTIAL FLUCTUATIONS; ELECTRICALLY ACTIVE DEFECTS; SMALL SIGNAL RESPONSE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0031076774     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/2/002     Document Type: Article

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