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Volumn 33, Issue 4, 1997, Pages 328-330

1.26W CW diffraction-limited InGaAsP flared amplifier at 780nm

Author keywords

Semiconductor junction lasers; Semiconductor optical amplifiers

Indexed keywords

ELECTROMAGNETIC WAVE DIFFRACTION; LIGHT AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031076544     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970216     Document Type: Article
Times cited : (2)

References (9)
  • 4
    • 36449008473 scopus 로고
    • High power, strained-layer InGaAs/AlGaAs tapered travelling-wave amplifier
    • WALPOLE, J., KINTZER, H., CHINN, S., WANG, C., and MISSAGIA, L.: 'High power, strained-layer InGaAs/AlGaAs tapered travelling-wave amplifier', Appl. Phys. Lett., 1992, 61, pp. 740-742
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 740-742
    • Walpole, J.1    Kintzer, H.2    Chinn, S.3    Wang, C.4    Missagia, L.5
  • 6
    • 0027270659 scopus 로고
    • 4.5CW, neardiffraction-limited tapered stripe semiconductor optical amplifier
    • MEHUYS, D., WELCH, D., and GOLDBERG, L.: '4.5CW, neardiffraction-limited tapered stripe semiconductor optical amplifier', Electron. Lett., 1993, 29, (2), pp. 219-221
    • (1993) Electron. Lett. , vol.29 , Issue.2 , pp. 219-221
    • Mehuys, D.1    Welch, D.2    Goldberg, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.