A four-channel, low-power CMOS charge preamplifier for silicon detectors with medium value of capacitance

IEEE Transactions on Nuclear Science

Volumn 44, Issue 1, 1997, Pages 31-35

  Randazzo, N ^a   Russo, G V ^a   Lo Presti, D ^a   Panebianco, S ^a   Petta, C ^a   Reito, S ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

ASICS; Charge preamplifier; VLSI

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE MEASUREMENT; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; SILICON SENSORS; SPURIOUS SIGNAL NOISE; VLSI CIRCUITS;

CHARGE PREAMPLIFIER;

APPLICATION SPECIFIC INTEGRATED CIRCUITS;

EID: 0031076137     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.554820     Document Type: Article

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