Amplitudes of doping striations: Comparison of numerical calculations and analytical approaches

Journal of Crystal Growth

Volumn 171, Issue 3-4, 1997, Pages 373-379

  Jung, T ^a   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TEMPERATURE;

DOPANT CONCENTRATION; DOPING STRIATIONS; DYNAMICAL VERTICAL GRADIENT FREEZE PROCESS; TRANSIENT HEATER TEMPERATURE PROFILE;

SEMICONDUCTOR GROWTH;

EID: 0031075968     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00704-X     Document Type: Article

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