Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors

Nonlinear Analysis, Theory, Methods and Applications

Volumn 28, Issue 3, 1997, Pages 463-487

  Glitzky, Annegret ^a   Gröger, Konrad ^a   Hünlich, Rolf ^a  

^a WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

A priori estimates; Asymptotic behaviour; Discrete time problems; Equilibria; Free energy; Global existence; Implicit and semi implicit scheme; Initial boundary value problem; Invariants; Reaction diffusion equations; Transport of dopants in semiconductors

Indexed keywords

ATOMS; BOUNDARY CONDITIONS; BOUNDARY VALUE PROBLEMS; CONVERGENCE OF NUMERICAL METHODS; DIFFUSION IN SOLIDS; ENERGY DISSIPATION; FREE ENERGY; INTEGRAL EQUATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; THEOREM PROVING; TRANSPORT PROPERTIES;

DISCRETE TIME METHODS; REACTION DIFFUSION EQUATIONS;

NONLINEAR EQUATIONS;

EID: 0031075757     PISSN: 0362546X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0362-546X(95)00169-V     Document Type: Article

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