Highly efficient diode-pumped 3-μm Er 3+:BaY 2F 8 laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 1, 1997, Pages 90-94

  Eichler, Hans J ^a,d,e,f,g   Findeisen, Julian ^a,g,h,i   Liu, Baining ^a,j,k   Kaminskii, A A ^b   Butachin, A V ^b   Peuser, Peter ^a,c,l,m,n  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^c DAIMLER AG   (Germany)

^d UNIVERSITY OF PADERBORN   (Germany)

^e LUCENT TECHNOLOGIES   (United States)

^f Society of Applied Optics (DGAO)   (Germany)

^g Optical Institute   (Germany)

^h CSIC   (Spain)

ⁱ Baumann University   (Russian Federation)

^j ZHEJIANG UNIVERSITY   (China)

^k Society of Chinese Physicists   (Germany)

^l JOHANNES GUTENBERG UNIVERSITY   (Germany)

^m GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

ⁿ Res Technol Dept M

more..

Author keywords

Crystals; Diodes; Erbium materials; Infrared radiation effects; Laser biomedical applications; Solid lasers

Indexed keywords

CRYSTAL ORIENTATION; DIODES; ERBIUM; INFRARED RADIATION; LASER APPLICATIONS; PUMPING (LASER); SEMICONDUCTOR LASERS;

INFRARED RADIATION EFFECTS; LASER DIODE PUMPING; QUANTUM DEFECT; WAVELENGTH;

SOLID STATE LASERS;

EID: 0031074792     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.585819     Document Type: Article

References (8)

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