Mid-infrared photoluminescence from liquid phase epitaxial InAs1-ySby/InAs multilayers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 738-742

  Gong, Xiuying ^a   Yamaguchi, Tomuo ^b   Kan, Hirofumi ^a   Makino, Takamitsu ^a   Rowell, Nelson L ^c   Lacroix, Yves ^d   Mangyou, Atsuo ^b   Aoyama, Mitsuru ^b   Kumagawa, Masashi ^b  

^a CENTRAL RESEARCH LABORATORY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d SIMON FRASER UNIVERSITY   (Canada)

Author keywords

High quality; InAsSb; Light emission diode; Liquid phase epitaxy; Mid infrared; Photoluminescence

Indexed keywords

MIDINFRARED LIGHT EMITTING DIODES (LEDS);

ARSENIC COMPOUNDS; COMPOSITION EFFECTS; ELECTROLUMINESCENCE; ENERGY GAP; LIGHT EMITTING DIODES; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

OPTICAL MULTILAYERS;

EID: 0031074081     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.738     Document Type: Article

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