Fabrication of refractive microlenses in semiconductors by mask shape transfer in reactive ion etching

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 385-388

  Strzelecka, E M ^a   Robinson, G D ^a,b   Coldren, L A ^a   Hu, E L ^a  

^a University of California   (United States)

^b W L GORE AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICE MANUFACTURE; MASKS; OPTICAL SYSTEMS; PHOTODETECTORS; POLYIMIDES; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES;

ANISOTROPIC DRY ETCHING; MASK SHAPE TRANSFER; REFRACTIVE MICROLENSES; VERTICAL CAVITY SURFACE EMITTING LASERS;

LENSES;

EID: 0031073871     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00206-7     Document Type: Article

References (6)

1. E. M. Strzelecka, G. B. Thompson, G. D. Robinson, M. G. Peters, B. J. Thibeault, M. Mondry, V. Jayaraman, F. H. Peters, and L. A. Coldren, SPIE, vol. 2691, pp. 43-53 (1996)
2. E. M. Strzelecka, G. D. Robinson, M. G. Peters, F. H. Peters, and L. A. Coldren, Electron. Lett., 31, pp. 724-725 (1995)
3. Z. D. Popovic, R. A. Sprague, and G. A. N. Connel, Appl. Opt., 21, pp. 1281-1284 (1988)
4. O. Blum, S. P. Kilcoyne, M. E. Warren, T. C. Du, K. L. Lear, R. P. Schneider, Jr., R. F. Carson, G. Robinson, and F. H. Peters, Electron. Lett., 31, pp. 44-45 (1995)
5. H. Sankur, E. Motamedi, R. Hall, W. J. Gunning, and M. Khoshnevisan, SPIE, vol. 2383, pp. 179-83 (1996)
6. B. J. Thibeault, E. R. Hegblom, P. D. Floyd, R. Naone, Y. Akulova, and L. A. Coldren, IEEE Photon. Technol. Lett., vol. 6, pp. 593-595 (1996)