Light activated p-n junction device based on bilayer substituted polythiophene derivatives

Synthetic Metals

Volumn 85, Issue 1-3, 1997, Pages 1353-1354

  Greenwald, Y ^a   Poplawski, J ^a   Ehrenfreund, E ^a   Speiser, S ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Photo activated device; Polythiophene derivatives

Indexed keywords

DERIVATIVES; ELECTRIC RECTIFIERS; PHOTONS; SEMICONDUCTING POLYMERS; ULTRAVIOLET RADIATION;

LIGHT ACTIVATION; PHOTOINDUCED CURRENT RECTIFIERS; POLYTHIOPHENE DERIVATIVES;

SEMICONDUCTOR JUNCTIONS;

EID: 0031073720     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)80268-8     Document Type: Article

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