Conductivity dependence on the thickness of hydrogenated, amorphous silicon-carbon films

Thin Solid Films

Volumn 295, Issue 1-2, 1997, Pages 287-294

  Koropecki, R R ^a   Arce, R D ^a   Buitrago, R H ^a   Bittencourt, C ^b   Alvarez, F ^b  

^a Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

^b UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Amorphous materials; Conductivity; Interfaces; Silicon carbide

Indexed keywords

ABSORPTION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SILICON CARBIDE; SUBSTRATES;

DEFECT DENSITY; FILM THICKNESS; SUB GAP ABSORPTION COEFFICIENT;

AMORPHOUS FILMS;

EID: 0031073699     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09275-9     Document Type: Article

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