Characterization of dislocation densities in germanium and silicon single crystals by high resolution X-ray diffraction

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 2, 1997, Pages 343-353

  Sous, S A ^a   Hildmann, B O ^a   Kaysser, W A ^a  

^a Inst fuer Werkstoff Forschung   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); DISTORTION (WAVES); ELECTROMAGNETIC DISPERSION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; X RAY CRYSTALLOGRAPHY;

DISLOCATION DENSITY; ETCH PITS DENSITY (EPD); FLOATING ZONE; FULL WIDTH AT HALF MAXIMUM (FWHM); X RAY ROCKING CURVES;

SINGLE CRYSTALS;

EID: 0031073629     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199702)159:2<343::AID-PSSA343>3.0.CO;2-#     Document Type: Article

References (29)