Improving the resistance of PECVD silicon nitride to dry etching using an oxygen plasma

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 41-44

  Hicks, S E ^a   Murad, S K ^a   Sturrock, I ^a   Wilkinson, C D W ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSIFICATION; IONS; MASKS; OXYGEN; PLASMA ETCHING; REACTIVE ION ETCHING; REFLECTOMETERS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS;

FILM THICKNESS; IN SITU REFLECTOMETRY; ION FLUX DENSITY; OXYGEN PLASMA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON TETRACHLORIDE;

SILICON NITRIDE;

EID: 0031073545     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00139-6     Document Type: Article

References (2)

1. S.E. Hicks, W. Parkes, J.A.H. Wilkinson and C.D.W. Wilkinson, J. Vac. Sei. Technol. B. Vol 12 No.6, (1995) 3306.
2. K.E. Mattsson, J. Appl. Phys., Vol 77 No. 12, (1995), 6616.