DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

Synthetic Metals

Volumn 85, Issue 1-3, 1997, Pages 1341-1342

  Jones, G W ^a   Taylor, D M ^a   Gomes, H L ^b  

^a BANGOR UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

DLTS; Poly(3 methylthiophene); Schottky Barrier Diodes

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROPOLYMERIZATION; SEMICONDUCTOR DEVICE MODELS;

RATE WINDOW TECHNIQUE;

SCHOTTKY BARRIER DIODES;

EID: 0031073265     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)80262-7     Document Type: Article

References (3)

1. D.M. Taylor and H.L. Gomes, J. Phys. D: Appl. Phys., 28 (1995) 2554
2. D.V. Lang, J.Appl. Phys., 45 (1974) 3023
3. E.H. Rhoderick, Metal Semiconductor Contacts, Clarendon Press, Oxford (1978)