Field-effect transistor studies of precursor-pentacene thin films

Synthetic Metals

Volumn 85, Issue 1-3, 1997, Pages 1403-1404

  Jarrett, C P ^a   Brown, A R ^b   Friend, R H ^a   Harrison, M G ^a   De Leeuw, D M ^b   Herwig, P ^c   Mullen K ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

Author keywords

Metal oxide semiconductor (MOS) structures

Indexed keywords

MOS DEVICES; THIN FILMS;

PRECURSOR PENTACENE THIN FILMS; VOLTAGE MODULATION SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 0031073230     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)80293-7     Document Type: Article

References (8)

1. A. Dodabalapur, L. Torsi, H. E. Katz, Science 268, 270 (1995).
2. A. R. Brown, D. M. de Leeuw, E. E. Havinga, A. Pomp, Synth. Metal. 68, 65 (1994).
3. C. P. Jarrett, R. H. Friend, A. R. Brown, D. M. de Leeuw, J. Appl. Phys. 77, 6289 (1995).
4. H. Fuchigami, A. Tsumura, H. Koezuka, Appl. Phys. Lett. 63, 1372 (1993).
5. C.P. Jarrett, J.A. Stephens, R.H. Friend, W.J. Feast, G. Widawski, In preparation
6. A. R. Brown, A. Pomp, D. M. de Leeuw, D.B.M Klaassen, E. E. Havinga, P. Herwig, K. Müllen, J. Appl. Phys. 79, 2136 (1996).
7. M. G. Harrison, R. H. Friend, F. Garnier, A. Yasser, Synth. Metal. 67, 215 (1994).
8. G. Horowitz, R. Hajlaoui, P. Delannoy, Journal De Physique Iii 5, 355 (1995).