Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device

Synthetic Metals

Volumn 85, Issue 1-3, 1997, Pages 1267-1268

  Cao, Y A ^a   Bai, Y B ^a   Men, Q J ^b   Chen, C H ^a   Yang, J H ^a   Chai, X D ^a   Yang, W S ^a   Wu, Z W ^a   Li, T J ^a  

^a JILIN UNIVERSITY   (China)

^b JUIN UNIVERSITY   (China)

Author keywords

Electroluminescence; Heterojunctions

Indexed keywords

BAND STRUCTURE; CYCLIC VOLTAMMETRY; ELECTROCHEMICAL ELECTRODES; ELECTROLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; ULTRAVIOLET SPECTROSCOPY;

INDIUM TIN OXIDE; SURFACE PHOTOVOLTAGE SPECTRA (SPS);

LUMINESCENT DEVICES;

EID: 0031072778     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)80234-2     Document Type: Article

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