A new fabrication process for metallic point contacts

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 317-320

  Gribov, N N ^a,b   Theeuwen, S J C H ^a   Caro, J ^a   Radelaar, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; LITHOGRAPHY; OXIDATION; OXIDES; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; SILICON WAFERS; SUBSTRATES;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METALLIC POINT CONTACTS; OPTICAL LITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

POINT CONTACTS;

EID: 0031072169     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00141-4     Document Type: Article

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