Fabrication of MSM detector structures on silicon by focused ion beam implantation

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 455-458

  Teichert, J ^a   Bischoff, L ^a   Hausmann, S ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ELECTROCHEMICAL ELECTRODES; ION BEAMS; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

COBALT DISILICIDE; COBALT FOCUSED ION BEAM; ELECTRODE PATTERNS; ION BEAM IMPLANTATION; ION BEAM SYNTHESIS; METAL SEMICONDUCTOR METAL PHOTODETECTORS;

PHOTODETECTORS;

EID: 0031071980     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00186-4     Document Type: Article

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