Photoluminescence analysis of InGaP top cells for high-efficiency multi-junction solar cells

Solar Energy Materials and Solar Cells

Volumn 45, Issue 4, 1997, Pages 331-339

  Yang, Ming Ju ^a   Yamaguchi, Masafuini ^a   Takamoto, Tatsuya ^b   Ikeda, Eiji ^b   Kurita, Hiroshi ^b   Ohmori, Masamichi ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN ENERGY CORPORATION   (Japan)

Author keywords

InGaP top cells; Multi junction solar cells; Photoluminescence

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

INDIUM GALLIUM PHOSPHIDE TOP CELLS; MULTIJUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 0031070773     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(96)00079-7     Document Type: Article

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