Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 84-87

  Chelly, R ^a   Werckmann, J ^b   Angot, T ^a   Louis, P ^a   Bolmont, D ^a   Koulmann, J J ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b CNRS   (France)

Author keywords

Germanium; Growth mechanism; Molecular beam epitaxy; Nanostructures; Silicon

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

QUARTZ CRYSTAL MICROBALANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031070389     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09299-1     Document Type: Article

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