Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 96-100

  Muller S ^a   Weyher, J L ^a   Dian, R ^a   Jantz, W ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Atomic force microscopy; Quantum wells; Selective etching; Semiconductors; Superlattices

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; ETCHING; HYDROGEN PEROXIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; THICKNESS MEASUREMENT;

SELECTIVE WET ETCHING;

HETEROJUNCTIONS;

EID: 0031070320     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)80006-2     Document Type: Article

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