Fermi-level pinning in Schottky diodes on IV-IV semiconductors: Effect of Ge and C incorporation

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 141-144

  Mamor, M ^a   Perrossier, J L ^a   Aubry Fortuna, V ^a   Meyer, F ^a   Bouchier, D ^a   Bodnar, S ^b   Regolini, J L ^b  

^a CNRS   (France)

^b ORANGE LABS   (France)

Author keywords

Carbon; Fermi level; Germanium; Schottky diodes; Semiconductors

Indexed keywords

FERMI LEVEL; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

CARBON INCORPORATION;

SCHOTTKY BARRIER DIODES;

EID: 0031070163     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09239-5     Document Type: Article

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