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Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 143-146

Study of phonons in semiconductor superlattices by Raman scattering spectroscopy and microscopic model calculation

(5) Talwar, D N a Roughani, B b,c Pellegrino, J G c Amirtharaj, P c Qadri, S B d

a INDIANA UNIVERSITY OF PENNSYLVANIA (United States)

b KETTERING UNIVERSITY (United States)

c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

d NAVAL RESEARCH LABORATORY (United States)

Author keywords

Molecular beam epitaxy; Superlattices; X ray diffraction

Indexed keywords

HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

CONTINUUM MODEL; RIGID ION MODEL;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031070129 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01776-X Document Type: Article

Times cited : (7)

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