Highly sensitive resist material for deep x-ray lithography

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 105-108

  Schenk, R ^a   Halle, O ^a   Mullen K ^b   Ehrfeld, W ^a   Schmidt, M ^a  

^a INSTITUT FÜR MIKROTECHNIK MAINZ GMBH   (Germany)

^b MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MICROELECTRONICS; PHOTOLITHOGRAPHY; POLYMETHYL METHACRYLATES; SEMICONDUCTING POLYMERS; THIN FILMS;

ACID GENERATOR; CHEMICAL AMPLIFICATION; CHEMICALLY AMPLIFIED NEGATIVE TONE RESIST; CROSSLINKER; DEEP X RAY LITHOGRAPHY;

X RAY LITHOGRAPHY;

EID: 0031069313     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00165-7     Document Type: Article

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