Electroplating: An alternative transfer technology in the 20nm range

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 51-54

  Simon, G ^a   Haghiri Gosnet, A M ^a   Carcenac, F ^a   Launois, H ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DRY ETCHING; ELECTRON BEAMS; GOLD; GROWTH (MATERIALS); MASKS; MASS TRANSFER; NANOSTRUCTURED MATERIALS;

ELECTROPLATED WIRE; PATTERN TRANSFER;

ELECTROPLATING;

EID: 0031069265     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00145-1     Document Type: Article

References (8)

1. P.R. Krauss and S.Y. Chou, J. Vac. Sci. Technol. B 13, 2850 (1995)
2. W. Xu, J. Wong, C.C. Cheng, R. Johnson, and A. Scherer, J. Vac. Sci. Technol. B 13, 2372 (1995)
3. H.G. Craighead, R. E. Howard, L.D. Jackel and P.M. Mankiewich, Appl. Phys. Lett. 42(1) 38 (1983)
4. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 11, 2519 (1993)
5. J.O. Dukovic, IBM J. Res. Develop., Vol. 37, No.2, March 1993
6. R.T.C. Choo, J.M. Toguri, A.M. El-Sherik, U. Erb, J. Appl. Electrochem., 25, 384-403 (1995)
7. T.C. Halsey, Phys. Rev. A, 36, 3512 (1987)
8. C-A. Chang, Phys. Rev. B, 42 (18), 1946 (1990)