Enrichment of silicon isotopes by infrared laser irradiation

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 61, Issue 2, 1997, Pages 145-152

  Suzuki, Hiroshi ^a   Araki, Hiroshi ^a   Noda, Tetsuji ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Hexa fluorodisilane; Infrared laser; Isotope separation; Silicon isotope; Tetra fluorosilane

Indexed keywords

CARBON DIOXIDE LASERS; DECOMPOSITION; INFRARED RADIATION; ISOTOPES; LASER BEAM EFFECTS; SILANES; WAVE EFFECTS;

HEXAFLUOROSILANE; INFRARED LASERS; LASER WAVENUMBER; MASS BALANCE ANALYSIS; TETRAFLUOROSILANE; YIELD EFFICIENCY;

SILICON;

EID: 0031069229     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.61.2_145     Document Type: Article

References (10)

1. P. G. Klements: Int. J. Thermophysics, 2 (1981), 323.
2. M. Kamioka, Y. Ishikawa, H. Kaetsu, S. Isomura and S. Arai: J. Phys. Chem., 90 (1986), 5727.
3. S. Arai, H. Kaetsu and S. Isomura: Appl. Phys., B53 (1991), 199.
4. H. Suzuki, H. Araki and T. Noda: Proc. 2nd Japan/China Symposium on Materials for Advanced Energy Systems and Fission and Fusion Engineering, Tokyo, (1994), 62.
5. L. Halonen: J. Mol. Spectrosc., 120 (1986), 175.
6. J. Lymann and S. Rockwood: J. Appl. Phys., 47 (1976), 595.