Capacitive pressure sensor with center clamped diaphragm

IEICE Transactions on Electronics

Volumn E80-C, Issue 2, 1997, Pages 263-267

  Omi, Toshihiko ^a   Horibata, Kenji ^a   Sato, Fumihiko ^a   Takeuchi, Masashi ^a  

^a OMRON CORPORATION   (Japan)

Author keywords

Capacitance; Diaphragm; Linearity; Micromachining; Pressure sensor

Indexed keywords

CAPACITANCE; CRYSTAL STRUCTURE; DIAPHRAGMS; MICROMACHINING; PRESSURE GAGES;

SILICON CAPACITIVE PRESSURE SENSOR;

SILICON SENSORS;

EID: 0031069224     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Y. S. Lee and K. D. Wise, "A batch fabricated silicon pressure transducer with low temperature sensitivity," IEEE Trans. Electron Devices, vol. ED-29, pp. 48-50, 1982.
2. S. Shoji, T. Nisase, M. Esashi, and T. Matsuo, "Fabrication of an implantable capacitive type pressure sensor," Proc. 4th Int. Conf. Solid-State Sensors and Actuators, Tokyo, Japan, pp. 305-308, June 2-5, 1987.
3. T. Kudoh, S.Shoji, and M. Esashi, "An integrated miniature capacitive pressure sensor," Sensors and Actuators A29, pp. 185-193, 1991.
4. B. Pures, E.Peeters, and W.Sansen, "CAD tools in mechanical sensor design," Sensors and Actuators, vol. 17, pp. 423-429, 1989.
5. G. S. Sander, J. W. Knutti, and J. D. Meidel, "A monolithic capacitive pressure sensor with pulse-periode output," IEEE Trans. Electron Devices, vol, ED-27, pp. 927-930, 1980.
6. K. Petersen, "Silicon as a mechanical material," Proc. IEEE, vol.70, pp. 420-457, 1982.