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Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 223-226

Erbium doping of Si via ion-beam-induced epitaxial crystallization: Another route to room-temperature photoluminescence

(6) Clerc, C a Bernas, H a Chaumont, J a Boucaud, P b Julien, F b Lourtioz, J M b

a CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES (France)

b UNIVERSITÉ PARIS DAUPHINE (France)

Author keywords

Ion beam crystallization; Photoluminescence; Rare earth metals; Rutherford channeling

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; ERBIUM; ION BEAMS; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION;

SEMICONDUCTING SILICON;

EID: 0031069222 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09234-6 Document Type: Article

Times cited : (5)

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