Development and characterization of nitride and oxide based composite materials for sub 0.18 μm attenuated phase shift masking

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 201-204

  Smith, Bruce W ^b   Alam, Zulfiqar ^b   Butt, Shahid ^b   Kurinec, Santosh ^b   Lane, Richard L ^b   Arthur, Graham ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b Rochester Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRONS; LIGHT ABSORPTION; MASKS; NITRIDES; OPTICAL PROPERTIES; OXIDES; REACTIVE ION ETCHING; REFRACTIVE INDEX; SPUTTER DEPOSITION; STOICHIOMETRY;

ALUMINUM RICH ALUMINUM NITRIDE; ATTENUATING FILM; MOLYBDENUM SILICON OXIDE; NON STOICHIOMETRIC SILICON NITRIDE; PHASE SHIFT MASKING; TANTALUM SILICON OXIDE;

THIN FILMS;

EID: 0031069212     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00121-9     Document Type: Article

References (3)

1. M. Born and E. Wolf, Principles of Optics, (Pergamon Press, Oxford, England, 1980), p. 60.
2. R. E. Hummel, Electronic Properties of Materials, (Springer-Verlag, New York, 1993), pp 186-230.
3. P.V. Bulkin, P.L. Swart, B.M. Lacquet, Optical Engineering, 33(9), 2894 (1994).