1.2 V to 3.3 V wide-voltage-range DRAM with 0.8 V array operation

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 40, Issue , 1997, Pages 66-67

  Tsukude, Masaki ^a   Kuge, Shigehiro ^a   Fujino, Takeshi ^a   Arimoto, Kazutami ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CHARGE TRANSFER DEVICES; CMOS INTEGRATED CIRCUITS; DATA TRANSFER; TRANSISTORS; VOLTAGE CONTROL;

CHARGE TRANSFER PRESENSING METHOD; CHARGE TRANSFER SENSING METHOD; DYNAMIC RANDOM ACCESS MEMORY (DRAM);

RANDOM ACCESS STORAGE;

EID: 0031069019     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)