Grain growth in boron doped Ni76Al24

Scripta Materialia

Volumn 36, Issue 3, 1997, Pages 269-274

  Chaturvedi, M C ^a   Banerjee, S ^b   Jena, A K ^b  

^a UNIVERSITY OF MANITOBA   (Canada)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; COLD WORKING; GRAIN GROWTH; GRAIN SIZE AND SHAPE; NUMERICAL METHODS; REACTION KINETICS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TEMPERATURE;

GRAIN GROWTH EQUATION; ISOTHERMAL ANNEALING; NICKEL ALUMINIDES;

SEMICONDUCTING INTERMETALLICS;

EID: 0031062105     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6462(96)00385-5     Document Type: Article

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