Temperature dependence of the short-wave quantum efficiency of GaAs and GaP surface-barrier photosensors

Sensors and Actuators, A: Physical

Volumn 58, Issue 2, 1997, Pages 121-123

  Goldberg, Yu A ^a   Konstantinov, O V ^a   Posse, E A ^a   Tsarenkov, B V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; Gallium phosphide; Quantum efficiency; Surface barrier photosensors

Indexed keywords

OPTICAL SENSORS; PHOTOELECTRIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET DETECTORS;

GALLIUM PHOSPHIDE; PHOTOSENSORS; SURFACE-BARRIER PHOTOSENSORS;

PHOTODETECTORS;

EID: 0031060761     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01402-1     Document Type: Article

References (4)

1. B.V. Tsarenkov, Yu.A. Goldberg, G.V. Gusev and V.I. Ogurtsov, Photoelectric properties of Au-n-GaAs surface-barrier structures in ultraviolet spectral region, Sov. Phys. - Semiconductors, 8 (1974) 264-265.
2. Yu.A. Goldberg, T.V. L'vova, O.A. Mezrin, S.I. Troshkov and B.V. Tsarenkov, Short-wavelength photosensitivity of surface-barrier GaAs structures, Sov. Phys. - Semiconductors, 24 (1990) 1143-1147.
3. Hamamatsu Photonix, Catalog: Photodiodes (1995).
4. Yu.A. Goldberg and B.V. Tsarenkov, Method of semiconductor device making, USSR Patent No. 392 845 (1975).