Determination of trace elements in a silicon single crystal

Journal of Radioanalytical and Nuclear Chemistry

Volumn 216, Issue 2, 1997, Pages 165-169

  Takeuchi, T ^a   Nakano, Y ^a   Fukuda, T ^b   Hirai, I ^b   Osawa, A ^b   Toyokura, N ^b  

^a KYOTO UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE; SILICON DIOXIDE; TRACE ELEMENT;

CHEMICAL ANALYSIS; CONFERENCE PAPER; CRYSTAL; NEUTRON ACTIVATION ANALYSIS;

EID: 0030969560     PISSN: 02365731     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02033773     Document Type: Conference Paper

References (5)

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2. F. A. TRUMBORE, Bell Syst. Tech. J., 39 (1960) 205.
3. W. ZUHLENER, D. HUBER, Silicon, Chemical Etching, Crystal Growth, Properties and Applications, Vol. 8, Springer Verlag, New York, 1982.
4. T. TAKEUCHI, Y. NAKANO, T. FUKUDA, I. HIRAI, A. OSAWA, N. TOYOKURA, Annu. Rep. Res. Reactor Inst. Kyoto Univ., 21 (1988) 69.
5. S. NIESE, J. Radioanal. Chem., 38 (1977) 37.