The influence of inclined surfaces on HOLZ reflections

Journal of Electron Microscopy

Volumn 46, Issue 2, 1997, Pages 109-117

  Spellward, Paul ^a,c   Rossouw, Chris ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b CSIRO   (Australia)

^c Berkeley Centre   (United Kingdom)

Author keywords

Higher order Laue zones

Indexed keywords

ALUMINUM ALLOYS; DISPERSIONS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; SELENIUM COMPOUNDS; SEMICONDUCTOR ALLOYS;

BEAM INTENSITY; BLOCH STATE; DIFFRACTED BEAMS; DISPERSION SURFACE; DYNAMICAL THEORY; HIGHER ORDER LAUE ZONES; INCLINED SURFACE; SURFACE NORMALS;

ALUMINUM GALLIUM ARSENIDE;

EID: 0030916828     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023498     Document Type: Article

References (28)

1. Buxton B F, Eades J A, Steeds J W, and Rackham G M (1976) The symmetry of electron diffraction zone axis patterns. Phil. Trans. Roy. Soc. Lond. 281: 171-194.
2. Bird D M, Walmsley J C, and Vincent R (1983) Observation of unexpected asymmetry in CBED patterns from tilted crystals. Institute of Physics Conference Series 68 (EMAG'83 Guildford), p. 41, (I.O.P. Publishing, Bristol UK).
3. Goodman P (1974) Role of upper-layer interactions in diffraction symmetries. Nature 251: 698-701.
4. Gjonnes J and Gjonnes K (1985) Bloch wave symmetries and inclined surfaces. Ultramicroscopy 18: 77-82.
5. Sheinin S S and Jap B K (1979) On the validity of assuming symmetrical Laue diffraction conditions in calculations of diffraction contrast. Phys. Stat. Sol. B91: 407-412.
6. Allen L J and Rossouw C J (1989) Effects of thermal scattering and surface tilt on diffraction and channeling of fast electrons in CdTe. Phys. Rev. B 39: 8313-8321.
7. Metherell J F (1976) Diffraction of electrons by perfect crystals. In Valdre U and Ruedi E, eds, Electron Microscopy in Materials Science, part 2, p. 397, (Commission of the European Communities).
8. Radi G (1970) Complex lattice potentials in electron diffraction calculated for a number of crystals. Acta Cryst. A 26: 41-56.
9. Bird D M and King Q A (1990) Absorptive Form Factors for High-Energy Electron Diffraction. Acta Cryst. A 46: 202-208.
10. Zuo J M, Gjonnes K, and Spence J C H (1989) FORTRAN source listing for simulating 3-dimensional convergent beam patterns with absorption by the Bloch wave method. J. Electron Microscopy Technique 12: 29-55.
11. Humble P and Morton A J (1987) Electron microscope images of defects in crystals with dilated surface layers. Phil. Mag. A 55: 693-715.
12. Rossouw C J and Perovic D D (1993) Dynamical LACBED analysis of Si/SiGe and Si/SiB multilayer structures. Ultramicroscopy 48: 49-61.
13. Xu P, Loane R F, and Silcox, J (1991) Energy filtered CBED in STEM. Ultramicroscopy 38: 127-133.
14. Reid J S (1983) Debye-Waller factors of zinc-blende-structure materials - a lattice dynamical comparison. Acta Cryst. A 39: 1-13.
15. Spellward P and James R (1991) The use of electron diffraction in the determination of the polarity of II-Vi and III-V semiconductors. Institute of Physics Conference Series 68 (EMAG'91 Bristol), pp. 375-378, (I.O.P. Publishing, Bristol UK).
16. Berry M V (1971) Diffraction in crystals at high energies. J. Phys. C 4: 697-722.
17. Al-Khafaji M A, Cherns D, Rossouw C J, and Woolf D A (1992) Interface atomic structure determination of an Al(001)/GaAs(001) bicrystal using HOLZ and ALCHEMI analysis. Phil. Mag. B 65: 385-399.
18. Rossouw C J and Miller P R (1993) Voltage and Temperature Dependence of Si HOLZ line positions. Phil. Mag. B 67: 731-745.
19. Mollenstedt G and Zhou F (1992) The HOLZ lines in Si [111] zone axis patterns. Microsc. Microanal. Microstruct. 3: 221-232.
20. Randle V, Barker I, and Ralph B (1989) Measurement of lattice parameter and strain using CBED. J. Electron Microsc. Techn. 13: 51-65.
21. Hashikawa N, Watanabe K, Kikuchi Y, Oshima Y, and Hashimoto I (1996) Higher-order Laue zone contrast from arsenic-doped silicon. Phil. Mag. Lett. 73: 85-91.
22. Allen L J and Rossouw C J (1993) Delocalization in electron impact ionization in a crystalline environment. Phys. Rev. B 47: 2446-2452.
23. Hetherington C J D, Eaglesham D J, Humphreys C J, and Tatlock, G J (1987) TEM compositional analysis in III-V alloys. In Cullis A G and Augustus P D, eds, Conference on Microscopy of Semiconducting Materials, Oxford, Institute of Physics Conference Series 87, pp. 655-658, (I.O.P. Publishing, Bristol UK).
24. Vincent R, Bird D M, and Steeds J W (1984) Structure of AuGeAs determined by CBED. I. Derivation of basic structure. Phil. Mag. A 50: 745-763.
25. Vincent R and Exelby D R (1991) Structure of metastable Al-Ge phases determined from HOLZ Patterson transforms. Phil. Mag. Lett. 63: 31-38.
26. Rossouw C J and Hampikian J M (1993) Electron diffraction measurements on chromium oxide. Phil. Mag. A 67: 849-863.
27. Rossouw C J, Gibson M A, and Forwood C T. Dynamical electron diffraction analysis of lattice parameters, Debye-Waller factors and order in Ti-Al and Ti-Ga alloys. Ultramicroscopy: (submitted)
28. Rossouw C J, Gibson M A, and Forwood C T (1996) CBED ZOLZ and HOLZ analysis of order in TiAl alloys. Phil. Mag. A 73: 187-201.