Hole diffusion length and temperature dependence of photovoltages for n-Si electrodes modified with LB layers of ultrafine platinum particles

Electrochimica Acta

Volumn 42, Issue 3, 1997, Pages 431-437

  Jia, Jianguang ^a,b   Fujitani, Mono ^a   Yae, Shinji ^a   Nakato, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Energy conversion; Minority carrier; Photoelectrochemistry; Semiconductor electrode; Solar cell

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTRIC CONTACTS; ENERGY CONVERSION; HEAT TREATMENT; LANGMUIR BLODGETT FILMS; PHOTOELECTROCHEMICAL CELLS; PLATINUM; SEMICONDUCTING SILICON; SOLAR CELLS; THERMAL EFFECTS;

HOLE DIFFUSION LENGTH; MINORITY CARRIERS; OPEN CIRCUIT PHOTOVOLTAGES; PHOTOELECTROCHEMISTRY; SEMICONDUCTOR ELECTRODES;

ELECTROCHEMICAL ELECTRODES;

EID: 0030837249     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(96)00238-1     Document Type: Article

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