A novel approach toward the simultaneous diffusion of boron and phosphorus in silicon

Journal of the Electrochemical Society

Volumn 144, Issue 1, 1997, Pages 346-349

  Krygowski, Thomas ^a   Rohatgi, Ajeet ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; BORON; CURRENT DENSITY; FABRICATION; OXIDES; PASSIVATION; PHOSPHORUS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; SOLAR CELLS; THERMAL DIFFUSION;

PHOTOCONDUCTANCE DECAY TECHNIQUE; SATURATION CURRENT DENSITY; THIN THERMAL OXIDE;

SEMICONDUCTING SILICON;

EID: 0030836936     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837407     Document Type: Article

References (9)

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