Polarization behavior of surface-emitting semiconductor lasers in an axial magnetic field

Optics Communications

Volumn 133, Issue 1-6, 1997, Pages 252-258

  Van Doorn, A K Jansen ^a   Van Exter, M P ^a   Travagnin, M ^a   Woerdman, J P ^a  

^a LEIDEN UNIVERSITY   (Netherlands)

Author keywords

Faraday effect; Polarization; Semiconductor microlaser

Indexed keywords

BIREFRINGENCE; FARADAY EFFECT; LIGHT EMISSION; LIGHT POLARIZATION; MAGNETIC FIELD EFFECTS;

VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030834694     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0030-4018(96)00448-8     Document Type: Article

References (23)

1. C.J. Chang-Hasnain, J.P. Harbison, L.T. Florez and N.G. Stoffel, Electron. Lett. 27 (1991) 163; K.D. Choquette, K.D. Richie and R.E. Leibenguth, Appl. Phys. Lett. 64 (1994) 2062; T. Yoshikawa et al., Electron. Lett. 31 (1995) 1573.
2. C.J. Chang-Hasnain, J.P. Harbison, L.T. Florez and N.G. Stoffel, Electron. Lett. 27 (1991) 163; K.D. Choquette, K.D. Richie and R.E. Leibenguth, Appl. Phys. Lett. 64 (1994) 2062; T. Yoshikawa et al., Electron. Lett. 31 (1995) 1573.
3. C.J. Chang-Hasnain, J.P. Harbison, L.T. Florez and N.G. Stoffel, Electron. Lett. 27 (1991) 163; K.D. Choquette, K.D. Richie and R.E. Leibenguth, Appl. Phys. Lett. 64 (1994) 2062; T. Yoshikawa et al., Electron. Lett. 31 (1995) 1573.
4. H. De Lang, D. Polder and W. van Haeringen, Philips Techn. Rev. 32 (1971) 190.
5. D. Lenstra, Phys. Rep. 59 (1980) 299, and references therein.
6. N.B. Abraham, E. Arimondo and M. San Miguel, Optics Comm. 117 (1995) 344, and references therein.
7. A.K. Jansen van Doom, M.P. van Exter and J.P. Woerdman, Electron. Lett. 30 (1994) 1941.
8. W. Van Haeringen, Phys. Rev. 158 (1967) 256
9. J.C. Cotteverte, F. Bretenaker and A. Le Floch, Optics Comm. 79 (1990) 321.
10. M. San Miguel, Q. Feng and J.V. Moloney, Phys. Rev. A 52 (1995) 1728.
11. M. Travagnin, M.P. van Exter, A.K. Jansen van Doom, and J.P. Woerdman, Phys. Rev. A, accepted.
12. Vixel Corporation, 325 Interlocken Parkway, Broomfield, CO 80021, USA.
13. K.D. Choquette, D.A. Richie and R.E. Leibenguth, Appl. Phys. Lett. 64 (1994) 2062; K.D. Choquette, R.P. Schneider, K.L. Lear and R.E. Leibenguth, IEEE J. Sel. Topics Quantum Electron. 1 (1995) 661.
14. K.D. Choquette, D.A. Richie and R.E. Leibenguth, Appl. Phys. Lett. 64 (1994) 2062; K.D. Choquette, R.P. Schneider, K.L. Lear and R.E. Leibenguth, IEEE J. Sel. Topics Quantum Electron. 1 (1995) 661.
15. J. Martin-Regalado, M. San Miguel and N.B. Abraham, Optics Lett. 21 (1996) 351.
16. R.J.G. Spreeuw, M.W. Beijersbergen and J.P. Woerdman, Phys. Rev. A 45 (1992) 1213.
17. H. Piller, Proc. Intern. Conf. Phys. Semicond., Paris 1964, p. 297; M. Zvara, Phys. Stat. Sol. 36 (1969) 785.
18. H. Piller, Proc. Intern. Conf. Phys. Semicond., Paris 1964, p. 297; M. Zvara, Phys. Stat. Sol. 36 (1969) 785.
19. T.C. Damen et al., Phys. Rev. Lett. 67 (1991) 3432; S. Bar-Ad and I. Bar-Joseph, Phys. Rev. Lett. 68 (1992) 349.
20. T.C. Damen et al., Phys. Rev. Lett. 67 (1991) 3432; S. Bar-Ad and I. Bar-Joseph, Phys. Rev. Lett. 68 (1992) 349.
21. S. Jiang, M. Dagenais and R.A. Morgan, Appl. Phys. Lett. 65 (1994) 1334; D. Kuksenkov et al., Appl. Phys. Lett. 66 (1995) 277.
22. S. Jiang, M. Dagenais and R.A. Morgan, Appl. Phys. Lett. 65 (1994) 1334; D. Kuksenkov et al., Appl. Phys. Lett. 66 (1995) 277.
23. M.P. van Exter, A.K. Jansen van Doom and J.P. Woerdman, IEEE J. Sel. Topics Quantum Electron. 1 (1995) 601.