Specific contact resistance at extremely low temperatures

Journal of Physics D: Applied Physics

Volumn 30, Issue 2, 1997, Pages 271-273

  Akiya, Masahiro ^a   Aihara, Moriaki ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BORON; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; MAGNESIUM; PHOSPHORUS; RESISTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DOPED SILICON CONTACTS;

ELECTRIC CONTACTS;

EID: 0030821074     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/2/014     Document Type: Article

References (9)

1. Fox R M and Jaeger R C 1987 IEEE Trans. Electron Devices 34 114
2. Chang C Y, Fang Y K and Sze S M 1971 Solid-State Electron. 14 541
3. Berger H H 1972 Solid-State Electron. 15 145
4. Anderson R M and Reith TM 1975 J. Electrochem. Soc. 122 1337
5. Akiya M, Nakamura H and Arita Y 1990 J. Electrochem. Soc. 137 2252
6. Akiya M and Nakamura H 1986 J. Appl. Phys. 59 1596
7. Murrmann H and Widmann D 1969 IEEE Trans. Electron Devices 16 1022
8. Cohen S S 1983 Thin Solid Films 104 361
9. Lei T F, Leu L and Lee C L 1986 IEEE Trans. Electron Devices Lett. 7 269